Low Temperature Growth of Photoactive Titania by Atmospheric Pressure Plasma
Atmospheric pressure glow discharge plasma CVD was used to deposit thin films of titania at 200 °C using two different precursors. The resulting films were characterised using techniques including XPS, RBS and XRD. It was established that annealing at temperatures as low as 275 °C produced crystalli...
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Published in | Plasma processes and polymers Vol. 6; no. 9; pp. 575 - 582 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Weinheim
WILEY-VCH Verlag
15.09.2009
WILEY‐VCH Verlag Wiley-VCH |
Subjects | |
Online Access | Get full text |
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Summary: | Atmospheric pressure glow discharge plasma CVD was used to deposit thin films of titania at 200 °C using two different precursors. The resulting films were characterised using techniques including XPS, RBS and XRD. It was established that annealing at temperatures as low as 275 °C produced crystalline films that were photocatalytically active. When annealed at 300 °C the photoactivity was greater than that of commercially available “self‐cleaning” titania films. The effects of the different precursors, annealing times and temperatures on the crystallinity and photoactivity are discussed.
Atmospheric pressure glow discharge plasma CVD can be used to produce highly uniform and scratch resistant thin films of titania whose properties depend on the precursors used. As‐deposited films are amorphous and sub‐stoichiometric, however, they become crystalline and photoactive upon annealing. Deposition on glass rather than quartz produces variation in films properties possibly due to variations in plasma characteristics. |
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Bibliography: | EC - No. GRD1-2001-40791 PHOTOCOAT ark:/67375/WNG-Q24QLV92-K ArticleID:PPAP200900028 EPSRC istex:C7A65D8CEB3AC722FBB0F8A2F318D22511D1DDE2 Pilkington PLC |
ISSN: | 1612-8850 1612-8869 |
DOI: | 10.1002/ppap.200900028 |