Low Temperature Growth of Photoactive Titania by Atmospheric Pressure Plasma

Atmospheric pressure glow discharge plasma CVD was used to deposit thin films of titania at 200 °C using two different precursors. The resulting films were characterised using techniques including XPS, RBS and XRD. It was established that annealing at temperatures as low as 275 °C produced crystalli...

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Published inPlasma processes and polymers Vol. 6; no. 9; pp. 575 - 582
Main Authors Hodgkinson, John L., Yates, Heather M., Sheel, David W.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 15.09.2009
WILEY‐VCH Verlag
Wiley-VCH
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Summary:Atmospheric pressure glow discharge plasma CVD was used to deposit thin films of titania at 200 °C using two different precursors. The resulting films were characterised using techniques including XPS, RBS and XRD. It was established that annealing at temperatures as low as 275 °C produced crystalline films that were photocatalytically active. When annealed at 300 °C the photoactivity was greater than that of commercially available “self‐cleaning” titania films. The effects of the different precursors, annealing times and temperatures on the crystallinity and photoactivity are discussed. Atmospheric pressure glow discharge plasma CVD can be used to produce highly uniform and scratch resistant thin films of titania whose properties depend on the precursors used. As‐deposited films are amorphous and sub‐stoichiometric, however, they become crystalline and photoactive upon annealing. Deposition on glass rather than quartz produces variation in films properties possibly due to variations in plasma characteristics.
Bibliography:EC - No. GRD1-2001-40791
PHOTOCOAT
ark:/67375/WNG-Q24QLV92-K
ArticleID:PPAP200900028
EPSRC
istex:C7A65D8CEB3AC722FBB0F8A2F318D22511D1DDE2
Pilkington PLC
ISSN:1612-8850
1612-8869
DOI:10.1002/ppap.200900028