In situ X-ray investigation of SiGe/Si islands grown by liquid phase epitaxy

• Published in: Physica status solidi. A, Applications and materials science Vol. 206; no. 8; pp. 1709 - 1713
• Main Authors: Deiter, S., Hanke, M., Eisenschmidt, C., Boeck, T., Teubner, T., Jendritzki, U., Gerlitzke, A.-K., Schadow, G.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.08.2009; WILEY‐VCH Verlag; Wiley-VCH
• Subjects: 61.05.cp; 68.55.ug; 68.65.−k; 81.15.Lm; 81.16.Dm; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; LPE; Investigation method; Ge-Si alloys; Experimental device; Silicon; XRD; Island structure; Synchrotron radiation
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.200881601

We report on the in situ observation during liquid phase epitaxy (LPE) of Stranski–Krastanow grown SiGe/Si(001) islands with X‐ray diffraction methods. Therefore, we developed a growth chamber combined with pre‐processed samples which afford LPE under N2 atmosphere (instead of H2 which is normally used for LPE) at a synchrotron beamline. The island evolution is probed with X‐ray diffraction methods from the backside of a thin silicon substrate which floats on the melt. The way towards LPE in situ X‐ray diffraction experiments will be described. Our results show the development of X‐ray diffraction signals in dependence of the current growth state.