Response of a DRAM to single-ion tracks of different heavy-ion species and stopping powers

• Published in: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37; no. 6; pp. 1844 - 1848
• Main Authors: Zoutendyk, J.A., Smith, L.S., Edmonds, L.D.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Legacy CDMS IEEE 01.12.1990
• Subjects: 426000 - Engineering- Components, Electron Devices & Circuits- (1990-); 440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems; Capacitance; CHARGED PARTICLES; Computer hacking; Contracts; ELECTRONIC CIRCUITS; Electronics And Electrical Engineering; Electrons; ELEMENTS; ENERGY RANGE; ENGINEERING; ERRORS; FABRICATION; FUNCTIONS; GOLD; HEAVY IONS; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; INTEGRATED CIRCUITS; IONS; Laboratories; MEASURING INSTRUMENTS; METALS; MEV RANGE; MEV RANGE 100-1000; MICROELECTRONIC CIRCUITS; MONITORS; MOS capacitors; NASA; PHYSICAL RADIATION EFFECTS; Propulsion; RADIATION EFFECTS; RADIATION MONITORS; Random access memory; RESPONSE FUNCTIONS; STOPPING POWER; TRANSITION ELEMENTS
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/23.101199

Multiple-bit errors caused by single-ion tracks in a 256-kb DRAM fabricated by a bulk process were observed for different ion species and stopping power values. The results demonstrate the utility of this device for the evaluation of ion-beam uniformity and ion-beam-induced charge collection in IC devices. The data indicate that single-ion-induced charge transport results in multiple-bit error clusters due to lateral diffusion of excess minority carriers (electrons). Charge collection occurred from a depth of up to 35 mu m from te surface of the device. An apparent charge loss was observed for very heavy ions with a high stopping power (Au at 350 MeV).< >