Characteristics of epitaxial layers grown by a new RF-induction heated hot-wall-type reactor for high-volume epitaxy

• Published in: Japanese Journal of Applied Physics Vol. 29; no. 5; pp. 805 - 809
• Main Authors: INOUE, Y, ONOSE, H, SUZUKI, T
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.05.1990
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Growth from vapor; Materials science; Methods of crystal growth; physics of crystal growth; Physics; Crystal growth; Hydrogen Chlorides; Hot wall growth; Semiconductor materials; Voltage current curve; Silicon; Epitaxial film; Experimental study; P n junction; Chemical vapor deposition; Wafer
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.29.805

Silicon epitaxial layers grown by a newly developed RF-induction heated hot-wall-type reactor (prototype) which is capable of processing at least 20 5-inch-diameter wafers per 100 mm of stack length, have been characterized. Satisfactory uniform layers with low undoped donor concentration (∼5×10 13 cm -3 ) and high crystalline quality have been obtained. The p + -n(epi)-n + junction diodes exhibited almost ideal breakdown and reverse leakage characteristics. The C-t response and the quasi-static C-V measurements from Al-gate MOS capacitors showed high minority carrier generation lifetimes of 150–800 µs and interface trap level densities comparable to those of bulk CZ silicon. An increase in undoped donor concentration and a decrease in carrier lifetime caused by HCl gas addition to the growth nutrient gas were observed.