Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity

Chemical phase separation at processing temperatures is an important issue for integration of Zr and Hf silicates alloys into advanced CMOS devices. Chemical phase separation into ZrO 2 and SiO 2 has been detected by different spectroscopic techniques, including Fourier transform infrared, X-ray pho...

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Published inMicroelectronic engineering Vol. 72; no. 1; pp. 304 - 309
Main Authors Rayner, G.B., Kang, D., Hinkle, C.L., Hong, J.G., Lucovsky, G.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.04.2004
Elsevier Science
Subjects
Applied sciences
Chemical phase separation
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
High- K dielectrics
Infrared and X-ray spectroscopy
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
High- K dielectrics
Infrared and X-ray spectroscopy
Chemical phase separation
High resolution
Fourier transformation
Dielectric materials
Dielectric properties
X ray spectrometry
X ray diffraction
X ray absorption spectrometry
Transmission electron microscopy
Complementary MOS technology
Imaging
Phase separation
High-K dielectrics
Comparative study
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Abstract Chemical phase separation at processing temperatures is an important issue for integration of Zr and Hf silicates alloys into advanced CMOS devices. Chemical phase separation into ZrO 2 and SiO 2 has been detected by different spectroscopic techniques, including Fourier transform infrared, X-ray photoelectron, and X-ray absorption spectroscopy, as well as X-ray diffraction and high resolution transmission electron microscopy imaging as well. Comparisons between techniques for Zr silicates identify an unambiguous approach to distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity. This is important since all modes of chemical separation degrade dielectric properties required for high- K applications.
AbstractList Chemical phase separation at processing temperatures is an important issue for integration of Zr and Hf silicates alloys into advanced CMOS devices. Chemical phase separation into ZrO2 and SiO2 has been detected by different spectroscopic techniques, including Fourier transform infrared, X-ray photoelectron, and X-ray absorption spectroscopy, as well as X-ray diffraction and high resolution transmission electron microscopy imaging as well. Comparisons between techniques for Zr silicates identify an unambiguous approach to distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity. This is important since all modes of chemical separation degrade dielectric properties required for high-K applications.
Chemical phase separation at processing temperatures is an important issue for integration of Zr and Hf silicates alloys into advanced CMOS devices. Chemical phase separation into ZrO 2 and SiO 2 has been detected by different spectroscopic techniques, including Fourier transform infrared, X-ray photoelectron, and X-ray absorption spectroscopy, as well as X-ray diffraction and high resolution transmission electron microscopy imaging as well. Comparisons between techniques for Zr silicates identify an unambiguous approach to distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity. This is important since all modes of chemical separation degrade dielectric properties required for high- K applications.
Author Hinkle, C.L.
Lucovsky, G.
Rayner, G.B.
Kang, D.
Hong, J.G.
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Cites_doi 10.1063/1.1391418
10.1557/PROC-611-C1.3.1
10.1116/1.1493787
10.1063/1.1404997
10.1116/1.1593646
10.1116/1.1493788
10.1063/1.371888
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Issue 1
Keywords High- K dielectrics
Infrared and X-ray spectroscopy
Chemical phase separation
High resolution
Fourier transformation
Dielectric materials
Dielectric properties
X ray spectrometry
X ray diffraction
X ray absorption spectrometry
Transmission electron microscopy
Complementary MOS technology
Imaging
Phase separation
High-K dielectrics
Comparative study
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Lucovsky (10.1016/j.mee.2004.01.008_BIB6) 2001; 79
Wilk (10.1016/j.mee.2004.01.008_BIB4) 2001; 87
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Snippet Chemical phase separation at processing temperatures is an important issue for integration of Zr and Hf silicates alloys into advanced CMOS devices. Chemical...
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SubjectTerms Applied sciences
Chemical phase separation
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
High- K dielectrics
Infrared and X-ray spectroscopy
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Title Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity
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