Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity

• Published in: Microelectronic engineering Vol. 72; no. 1; pp. 304 - 309
• Main Authors: Rayner, G.B., Kang, D., Hinkle, C.L., Hong, J.G., Lucovsky, G.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2004; Elsevier Science
• Subjects: Applied sciences; Chemical phase separation; Design. Technologies. Operation analysis. Testing; Electronics; Exact sciences and technology; High- K dielectrics; Infrared and X-ray spectroscopy; Integrated circuits; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; High- K dielectrics; Infrared and X-ray spectroscopy; Chemical phase separation; High resolution; Fourier transformation; Dielectric materials; Dielectric properties; X ray spectrometry; X ray diffraction; X ray absorption spectrometry; Transmission electron microscopy; Complementary MOS technology; Imaging; Phase separation; High-K dielectrics; Comparative study
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2004.01.008

Chemical phase separation at processing temperatures is an important issue for integration of Zr and Hf silicates alloys into advanced CMOS devices. Chemical phase separation into ZrO 2 and SiO 2 has been detected by different spectroscopic techniques, including Fourier transform infrared, X-ray photoelectron, and X-ray absorption spectroscopy, as well as X-ray diffraction and high resolution transmission electron microscopy imaging as well. Comparisons between techniques for Zr silicates identify an unambiguous approach to distinguishing between chemical phase separation with different degrees of micro- and nano-crystallinity. This is important since all modes of chemical separation degrade dielectric properties required for high- K applications.