Pure thiophene-sulfur doped reduced graphene oxide: synthesis, structure, and electrical properties

• Published in: Nanoscale Vol. 6; no. 13; pp. 7281 - 7287
• Main Authors: Wang, Zegao, Li, Pingjian, Chen, Yuanfu, He, Jiarui, Zhang, Wanli, Schmidt, Oliver G, Li, Yanrong
• Format: Journal Article
• Language: English
• Published: England 07.07.2014
• Subjects: Donors (electronic); Doping; Electrical properties; Electronics; Graphene; Optoelectronic devices; Oxides; Titanium dioxide
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/c3nr05061k

Here we propose, for the first time, a new and green ethanol-thermal reaction method to synthesize high-quality and pure thiophene-sulfur doped reduced graphene oxide (rGO), which establishes an excellent platform for studying sulfur (S) doping effects on the physical/chemical properties of this material. We have quantitatively demonstrated that the conductivity enhancement of thiophene-S doped rGO is not only caused by the more effective reduction induced by S doping, but also by the doped S atoms, themselves. Furthermore, we demonstrate that the S doping is more effective in enhancing conductivity of rGO than nitrogen (N) doping due to its stronger electron donor ability. Finally, the dye-sensitized solar cell (DSCC) employing the S-doped rGO/TiO2 photoanode exhibits much better performance than undoped rGO/TiO2, N-doped rGO/TiO2 and TiO2 photoanodes. It therefore seems promising for thiophene-S doped rGO to be widely used in electronic and optoelectronic devices.