350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
We demonstrated a UV-laser diode grown on low-dislocation-density AlGaN. The combination of a low-temperature-deposited AlN interlayer technology and heteroepitaxial lateral overgrowth yielded crack-free and partially low-dislocation-density AlGaN on a grooved GaN substrate. A ridge waveguide was fa...
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Published in | Japanese Journal of Applied Physics Vol. 43; no. 4A; p. L499 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.04.2004
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Online Access | Get full text |
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Summary: | We demonstrated a UV-laser diode grown on low-dislocation-density AlGaN. The combination of a low-temperature-deposited AlN interlayer technology and heteroepitaxial lateral overgrowth yielded crack-free and partially low-dislocation-density AlGaN on a grooved GaN substrate. A ridge waveguide was fabricated in the low-dislocation-density region. The lasing wavelength under pulsed current injection at room temperature was 350.9 nm, which is the shortest wavelength ever reported. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.43.L499 |