350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

We demonstrated a UV-laser diode grown on low-dislocation-density AlGaN. The combination of a low-temperature-deposited AlN interlayer technology and heteroepitaxial lateral overgrowth yielded crack-free and partially low-dislocation-density AlGaN on a grooved GaN substrate. A ridge waveguide was fa...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 43; no. 4A; p. L499
Main Authors Iida, Kazuyoshi, Kawashima, Takeshi, Miyazaki, Atsushi, Kasugai, Hideki, Mishima, Syunsuke, Honshio, Akira, Miyake, Yasuto, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Format Journal Article
LanguageEnglish
Published 01.04.2004
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Summary:We demonstrated a UV-laser diode grown on low-dislocation-density AlGaN. The combination of a low-temperature-deposited AlN interlayer technology and heteroepitaxial lateral overgrowth yielded crack-free and partially low-dislocation-density AlGaN on a grooved GaN substrate. A ridge waveguide was fabricated in the low-dislocation-density region. The lasing wavelength under pulsed current injection at room temperature was 350.9 nm, which is the shortest wavelength ever reported.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.43.L499