Effect of Single-Walled Carbon Nanotube Concentration on the Electrical Properties of Solution-Based Indium Gallium Zinc Oxide Thin Film Transistors

• Published in: Molecular Crystals and Liquid Crystals Vol. 510; no. 1; pp. 87/[1221] - 95/[1229]
• Main Authors: Heo, Kon Yi, Lee, Keun Woo, Oh, Sang Hoon, Kim, Gun Hee, Moujoud, Abderrafia, Song, Jean-Ho, Kim, Hyun Jae
• Format: Journal Article
• Language: English
• Published: Philadelphia Taylor & Francis Group 01.01.2009; Taylor & Francis Ltd
• Subjects: Carbon; carrier transport rod; indium gallium zinc oxide; Nanotubes; Physical properties; single-walled carbon nanotube; solution process; thin film transistor; Thin films; Transistors; Zinc oxides
• ISSN: 1542-1406; 1563-5287; 1527-1943
• DOI: 10.1080/15421400903058668

In this work, we have fabricated thin film transistors (TFTs) from a solution-based indium gallium zinc oxide (IGZO) and single-walled carbon nanotube (SWNT) blend by varying SWNT concentration. In order to improve electrical performances of IGZO TFT, SWNTs were used as carrier transport rods. We found out that the saturation field effect mobility (μ sat ) and on/off current ratio varied when the SWNT concentration changed. The concentration of SWNT in the solution is a critical parameter to control the electrical performances of IGZO TFT. The optimized performance of IGZO TFT with 0.04 wt.% SWNT concentration is as follows: μ sat of about 0.11 cm 2 /Vs, an on/off current ratio of ∼ 10 5 , threshold voltage (V th ) of − 2.5 V, and a subthreshold slope (S-factor) of 4.1 V/decade.