Shape evolution of high aspect ratio holes on Si(001) during hydrogen annealing

We study the dynamics of void formation through the shape evolution of high-aspect-ratio cylindrical holes in Si(001) substrates under hydrogen annealing. We compare the observed evolution of these holes with numerical simulations based on the continuum theory for surface-diffusion-driven shape evol...

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Bibliographic Details
Published inJournal of applied physics Vol. 114; no. 18
Main Authors Sudoh, K., Hiruta, R., Kuribayashi, H.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 14.11.2013
Subjects
Anisotropy
Annealing
Applied physics
Computer simulation
Continuums
Dynamic tests
Evolution
High aspect ratio
Hydrogen
Instability
Silicon substrates
Stability
Surface energy
Surface stability
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ISSN0021-8979
1089-7550
DOI10.1063/1.4829912

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Summary:We study the dynamics of void formation through the shape evolution of high-aspect-ratio cylindrical holes in Si(001) substrates under hydrogen annealing. We compare the observed evolution of these holes with numerical simulations based on the continuum theory for surface-diffusion-driven shape evolution. We find that a strong morphological instability arises near the hole opening, regardless of the presence of anisotropy in surface energy. The observed shape evolution of high-aspect-ratio holes during hydrogen annealing is understood as a surface-diffusion-driven evolution subject to the stability of the facets which form the vertical sidewall.
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ISSN:0021-8979
1089-7550
DOI:10.1063/1.4829912