A Compare Study on Electrical Properties of MS Diodes with and Without CoFe2O4-PVP Interlayer

• Published in: Journal of inorganic and organometallic polymers and materials Vol. 31; no. 4; pp. 1668 - 1675
• Main Authors: Tataroglu, A., Buyukbas Ulusan, A., Altındal, Ş., Azizian-Kalandaragh, Y.
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.04.2021; Springer Nature B.V
• Subjects: Chemistry; Chemistry and Materials Science; Cobalt ferrites; Depletion; Diffusion barriers; Diffusion layers; Diodes; Electrical impedance; Electrical properties; Inorganic Chemistry; Interlayers; Organic Chemistry; Parameters; Polymer Sciences; Polyvinylpyrrolidone; Thin films; Ultrasonic testing; Electronic parameters; Cobalt ferrite (CoFe; ); MS and MPS diode; Current conduction mechanisms; O; Polyvinylpyrrolidone (PVP)
• ISSN: 1574-1443; 1574-1451
• DOI: 10.1007/s10904-020-01798-x

Cobalt ferrite (CoFe 2 O 4 ) nanostructures in powder form were synthesized by an ultrasound assisted method. The crystalline structure of it was determined by XRD method. The prepared powder was mixed with an aqueous polyvinylpyrrolidone (PVP) solution to utilize as an interfacial thin film. The prepared CoFe 2 O 4 -PVP solution was deposited on the n-Si wafer utilizing electrospinning method. Electrical characteristics of the Au/n-Si (MS) and Au/(CoFe 2 O 4 -PVP)/n-Si (MPS) diodes were investigated using current and admittance (Y = G + iωC) measurements. Electrical parameters like ideality factor (n), barrier height (Φ B ), and series resistance (R s ) of them were extracted from I–V measurements. The Ln(I F )-(V F ) plots were drawn to determine the current conduction mechanisms (CCMs). Besides, the other diode parameters including diffusion potential, concentration of donor atoms, depletion layer width, barrier height and Fermi-energy were extracted from C −2 –V characteristic. As a result, the electrical parameters of these diodes were compared with each other, and the obtained results confirm that the polymer interlayer between M and S is more affective on electrical performance of the diode.