High dielectric constant of SrTiO3 thin films prepared by chemical process

• Published in: Journal of materials science Vol. 35; no. 19; pp. 4783 - 4787
• Main Authors: PONTES, F. M, LEE, E. J. H, LEITE, E. R, LONGO, E, VARELA, J. A
• Format: Journal Article
• Language: English
• Published: Heidelberg Springer 01.10.2000; Springer Nature B.V
• Subjects: Atomic force microscopy; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Dielectric thin films; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Dissipation factor; Exact sciences and technology; Heat treatment; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microscopy; Organic chemistry; Permittivity; Physics; Prepolymers; Scanning electron microscopy; Silicon dioxide; Silicon substrates; Spin coating; Strontium titanates; Thin films; Atomic force microscopy; Inorganic compounds; Ternary compounds; Transition element compounds; XRD; Experimental study; Heat treatments; Oxide ceramics; CV characteristic; Thin films; Dissipation; Strontium titanates; Spin-on coating; SEM; Microstructure; Permittivity
• ISSN: 0022-2461; 1573-4803
• DOI: 10.1023/A:1004816611050

SrTiO3 thin films were prepared by the polymeric precursor method and deposited by spin-coating onto Pt/Ti/SiO2/Si(100) substrates. The spin-coated films heat treated at 700°C were crack-free, dense, and homogeneous. Microstructural and morphological evaluations were followed by grazing incident X-ray, scanning electron microscopy and atomic force microscopy. Dielectric studies indicated a dielectric constant of about 475, which is higher than that of ceramic SrTiO3, and a factor dissipation of about 0.050 at 100 kHz. SrTiO3 thin films were found to have paraelectric properties with C-V characteristics.