Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells

• Published in: Physica status solidi. B. Basic research Vol. 228; no. 2; pp. 559 - 562
• Main Authors: Kuokstis, E., Zhang, Jianping, Yang, J.W., Simin, G., Asif Khan, M., Gaska, R., Shur, M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag Berlin GmbH 01.11.2001; WILEY‐VCH Verlag Berlin GmbH; Wiley
• Subjects: 73.63.Hs; 77.65.-j; 78.55.Cr; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics; Quantum wells; S7.14; Inorganic compounds; Epitaxial layers; Localized states; Gallium nitrides; Excitation intensity; Quantum wells; Photoluminescence; Multiple quantum well; Spectral line shift; MOCVD; Screening; Ultraviolet radiation; Electric field effects; Aluminium nitrides; Excitation spectrum; Indium nitrides; Quaternary compounds; Localized exciton; Spontaneous polarization
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/1521-3951(200111)228:2<559::AID-PSSB559>3.0.CO;2-V

We report on UV photoluminescence (PL) dynamics in highly excited quaternary AlxInyGa1—x—yN epilayers and multiple quantum wells (MQWs). At low temperature, in MQWs we have observed new PL band which appeared at low excitation on the long‐wave side of the spectrum and we show it to arise from localized carriers (excitons). The strong blue‐shift of PL maximum with excitation intensity in MQWs is caused by localized state filling and screening of piezoelectric and spontaneous polarization electric field.