Hydrogen-induced metallization on Ge(1 1 1) c(2 × 8)

We have studied hydrogen adsorption on the Ge(1 1 1) c(2 × 8) surface using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPES). We find that atomic hydrogen preferentially adsorbs on rest atom sites. The neighbouring adatoms appear higher in STM images, which c...

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Bibliographic Details
Published inApplied surface science Vol. 252; no. 15; pp. 5300 - 5303
Main Authors Razado, I.C., Zhang, H.M., Hansson, G.V., Uhrberg, R.I.G.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 2006
Elsevier Science
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Summary:We have studied hydrogen adsorption on the Ge(1 1 1) c(2 × 8) surface using scanning tunneling microscopy (STM) and angle-resolved photoelectron spectroscopy (ARPES). We find that atomic hydrogen preferentially adsorbs on rest atom sites. The neighbouring adatoms appear higher in STM images, which clearly indicates a charge transfer from the rest atom states to the adatom states. The surface states near the Fermi-level have been followed by ARPES as function of H exposure. Initially, there is strong emission from the rest atom states but no emission at the Fermi-level which confirms the semiconducting character of the c(2 × 8) surface. With increasing H exposure a structure develops in the close vicinity of the Fermi-level. The energy position clearly indicates a metallic character of the H-adsorbed surface. Since the only change in the STM images is the increased brightness of the adatoms neighbouring a H-terminated rest atom, we identify the emission at the Fermi-level with these adatom states.
Bibliography:ObjectType-Article-2
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content type line 23
ISSN:0169-4332
1873-5584
1873-5584
DOI:10.1016/j.apsusc.2005.12.062