Selection Rules for Optical Transitions Involving Impurities and Defects in Hexagonal GaN

We have performed a complete group‐theoretical analysis of state symmetries for electrons and excitons bound to impurities or defects in hexagonal GaN. The spin–orbit interaction has been taken into account. The selection rules for the optical transitions involving bound states have been established...

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Bibliographic Details
Published inphysica status solidi (b) Vol. 210; no. 2; pp. 471 - 474
Main Authors Tronc, P., Kitaev, Yu.E., Wang, G., Limonov, M.F.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.12.1998
WILEY‐VCH Verlag
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Summary:We have performed a complete group‐theoretical analysis of state symmetries for electrons and excitons bound to impurities or defects in hexagonal GaN. The spin–orbit interaction has been taken into account. The selection rules for the optical transitions involving bound states have been established. Transitions with light polarized along and perpendicular to the symmetry axis, respectively, are shown to generally obey different selection rules.
Bibliography:ark:/67375/WNG-9F2TTKLZ-J
ArticleID:PSSB471
istex:C52BDE82A238044B2E42547685BD6E313B53E6E1
ISSN:0370-1972
1521-3951
DOI:10.1002/(SICI)1521-3951(199812)210:2<471::AID-PSSB471>3.0.CO;2-T