Finite-Temperature Band Gap Renormalization in Highly Photoexcited GaN Epilayers

• Published in: physica status solidi (b) Vol. 216; no. 1; pp. 501 - 504
• Main Authors: Žukauskas, A., Juršėnas, S., Kurilčik, G., Tamulaitis, G., Shur, M.S., Gaska, R., Yang, J.W., Khan, M.A.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.11.1999; WILEY‐VCH Verlag
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/(SICI)1521-3951(199911)216:1<501::AID-PSSB501>3.0.CO;2-B

Room‐temperature luminescence spectra were investigated in GaN epilayers under extremely high photoexcitation. In a variety of samples, dynamics of the spectra with increase of the excitation intensity was found to exhibit a high‐carrier‐temperature regime of the electron–hole plasma. This regime was proved by a mutual relation of the parameters deduced from the spectra (the peak position and intensity of the luminescence band, as well as carrier temperature) in accordance with the finite‐temperature band gap renormalization theory.