A High-Power and Highly Linear CMOS Switched Capacitor

• Published in: IEEE microwave and wireless components letters Vol. 20; no. 11; pp. 619 - 621
• Main Authors: Youngchang Yoon, Hyungwook Kim, Yunseo Park, Minsik Ahn, Chang-Ho Lee, Laskar, J
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.11.2010; Institute of Electrical and Electronics Engineers
• Subjects: Amplifiers; Applied sciences; Capacitors; Circuit properties; CMOS; CMOS integrated circuits; Design factors; Design. Technologies. Operation analysis. Testing; Dielectric, amorphous and glass solid devices; Distortion; Electric, optical and optoelectronic circuits; Electronic circuits; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; IMD3; Integrated circuits; Linearity; Noise levels; Power amplifiers; power capability; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; switched capacitor; Switched capacitor circuits; Switching circuits; tunable capacitor; Tunable circuits and devices; Tuning; Voltage; Performance evaluation; Tunable circuit; Intermodulation distortion; Q factor; Small signal behavior; Third order; Small signal; power capability; Power electronics; Timbre; tunable capacitor; CMOS; IMD3; High power; switched capacitor; Switched capacitor networks; High voltage; Complementary MOS technology; Power amplifier; Capacitor
• ISSN: 1531-1309; 1558-1764
• DOI: 10.1109/LMWC.2010.2068282

A new CMOS switched capacitor is developed to be used for high-power applications such as a power amplifier, where high voltage handling capability and low distortion are two major factors. In order to demonstrate superior performance of the proposed structure over a conventional structure, two designs are analyzed and compared while maintaining comparable small signal characteristics such as a 2:1 tuning ratio and a quality factor. The maximum applicable voltage swing of the proposed structure is improved over the conventional structure by a factor of V DD / V th , or 12 dB in this design. The proposed structure also shows a greatly improved two-tone third-order inter-modulation distortion characteristic with a maximum 34 dB improvement. This proposed structure is a suitable component for tunable CMOS power amplifier applications.