Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation

New experimental data on planar channeling of 255 MeV electrons in a 0.74 µm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculi...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 732; no. 1; pp. 12036 - 12043
Main Authors Takabayashi, Y, Bagrov, V G, Bogdanov, O V, Pivovarov, Yu L, Tukhfatullin, T A
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.07.2016
Subjects
Angular distribution
Computer simulation
Electron trajectories
Electrons
Physics
Radiation
Silicon
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Summary:New experimental data on planar channeling of 255 MeV electrons in a 0.74 µm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/732/1/012036