Bond strength of bonded SOI wafers

• Published in: Japanese Journal of Applied Physics Vol. 31; no. 4; pp. 975 - 978
• Main Authors: SUGIMOTO, F, ARIMOTO, Y
• Format: Journal Article
• Language: English
• Published: Tokyo Japanese journal of applied physics 01.04.1992
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Temperature; Semiconductor materials; Chemical bond; Solid solid interface; Silicon Oxides; Silicon; Experimental study; Thermal annealing; Adhesion; Wafer; Tensile strength; Inorganic compound
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/jjap.31.975

We developed a tensile strength measurement technique for bonded silicon-on-insulator (SOI) wafers. After oxidation, wafers are patterned, prior to bonding, to reduce the bonded area. After bonding and grinding, tensile strength is measured by pulling samples perpendicularly to the interface by holders adhesively fixed to the samples. The strength of bonded SOI wafer annealed at 1100°C for 30 minutes exceeded 2000 kgf/cm 2 , and samples separated not at the bond interface, but at the Si itself. Both SiO 2 /Si and SiO 2 /SiO 2 bond strengths increased with annealing temperature. The SiO 2 /Si bond strength was stronger than that of the SiO 2 /SiO 2 bond for annealing temperatures under 1100°C. The strengths became equal after 1200°C annealing. The initial bond strength was maintained in a heat cycle varying from -65°C to 150°C in air for five months.