Low-Dimensional Silicon-Carbide Structures: Analytical Estimates of Electron-Spectrum Characteristics

Using the Green’s function method within the tight-binding approximation, the electronic structure of an infinite silicon-carbide sheet, and nanoribbons and one-dimensional chains cut from it, is considered. Analytical expressions for band gaps, electron effective masses and characteristic velocitie...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 54; no. 5; pp. 523 - 528
Main Author Davydov, S. Yu
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.05.2020
Springer
Springer Nature B.V
Subjects
Carbides
Dielectrics
Dimensional analysis
Electronic structure
Graphene
Low-Dimensional Systems
Magnetic Materials
Magnetism
Mathematical analysis
Physics
Physics and Astronomy
Quantum Phenomena
Semiconductor Structures
Silicon
Silicon carbide
Substrates
nanoribbons
zone structure
characteristic velocity
chains
substrate
effective mass
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Summary:Using the Green’s function method within the tight-binding approximation, the electronic structure of an infinite silicon-carbide sheet, and nanoribbons and one-dimensional chains cut from it, is considered. Analytical expressions for band gaps, electron effective masses and characteristic velocities are derived. The effect of metal and dielectric substrates on the band characteristics is discussed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620050048