Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range

A new method is used to raise the spectral sensitivity of photodiodes based on GaSb/GaInAsSb/GaAlAsSb heterostructures for the spectral range 1.1–2.4 μm. It is shown that, with a profile formed as pits on the metal-free unilluminated rear surface area of the photodiode chip, it is possible to improv...

Full description

Saved in:
Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 50; no. 10; pp. 1403 - 1407
Main Authors Kunitsyna, E. V., Grebenshchikova, E. A., Konovalov, G. G., Andreev, I. A., Yakovlev, Yu. P.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.10.2016
Springer
Springer Nature B.V
Subjects
Magnetic Materials
Magnetism
Metallizing
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Online AccessGet full text

Cover

More Information
Summary:A new method is used to raise the spectral sensitivity of photodiodes based on GaSb/GaInAsSb/GaAlAsSb heterostructures for the spectral range 1.1–2.4 μm. It is shown that, with a profile formed as pits on the metal-free unilluminated rear surface area of the photodiode chip, it is possible to improve the spectral sensitivity of the photodiodes at wavelengths in the range 1.8–2.4 μm. The most pronounced increase of up to 53% at the sensitivity maximum, compared with the sensitivity of conventional photodiodes with a fully metallized rear surface of the chip, is observed for photodiodes with shallow pits 30 μm in radius on their rear surface. These devices can find wide application in systems measuring the amount of water in petroleum products and the moisture content of paper, soil and grain.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616100158