Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN

• Published in: Optical and quantum electronics Vol. 46; no. 1; pp. 209 - 219
• Main Authors: Benyahya, N., Mazari, H., Benseddik, N., Benamara, Z., Mostefaoui, M., Ameur, K., Khelifi, R., Bluet, J. M., Chikhaoui, W., Bru-Chevallier, C.
• Format: Journal Article
• Language: English
• Published: Boston Springer US 2014; Springer Verlag
• Subjects: Aluminum gallium nitrides; Characterization and Evaluation of Materials; Computer Communication Networks; Contact; Electric contacts; Electrical Engineering; Engineering Sciences; Gallium nitrides; High electron mobility transistors; Lasers; Micro and nanotechnologies; Microelectronics; Optical Devices; Optics; Photonics; Physics; Physics and Astronomy; Quantum electronics; Semiconductor devices; Transistors; HEMT transistor; AlInN; Electrical characterization; GaN; AlGaN
• ISSN: 0306-8919; 1572-817X
• DOI: 10.1007/s11082-013-9747-4

In this paper, we have studied the Schottky contact of two structures AlInN/GaN and AlGaN/GaN in transistors HEMTs. The current–voltage Igs(Vgs) of AlInN/GaN and AlGaN/GaN structures were investigated at room temperature. The electrical parameters such as ideality factor (2.3 and 1.96), barrier height (0.72 and 0.71 eV) and series resistance (33 and 153 Ω ) were evaluated from I–V data. The comparison of the performance of the two structures AlInN/GaN and AlGaN/GaN in transistors HEMTs have been analyzed and discussed.