Model of mode-locked quantum-well semiconductor laser based on InGaAs InGaAlAs InP heterostructure

We propose a model for operation of mode-locked (ML) quantum-well semiconductor laser consisting of a reverse biased saturable absorber and a forward biased amplifying section. To describe the dynamics of this laser we use the traveling wave model. Numerical simulations performed for the InGaAs InGa...

Full description

Saved in:
Bibliographic Details
Published inJournal of physics. Conference series Vol. 741; no. 1; pp. 12079 - 12084
Main Authors Rybalko, D A, Polukhin, I S, Solov'ev, Y V, Mikhailovskiy, G A, Odnoblyudov, M A, Gubenko, A.E., Livshits, D.A., Firsov, A.N., Kirsyaev, A.N., Efremov, A.A., Bougrov, V E
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.08.2016
Subjects
Heterostructures
Indium gallium arsenides
Laser applications
Lasers
Mathematical models
Physics
Quantum wells
Semiconductor lasers
Traveling waves
Online AccessGet full text

Cover

More Information
Summary:We propose a model for operation of mode-locked (ML) quantum-well semiconductor laser consisting of a reverse biased saturable absorber and a forward biased amplifying section. To describe the dynamics of this laser we use the traveling wave model. Numerical simulations performed for the InGaAs InGaAlAs laser structure emitting at 1,55 um.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/741/1/012079