Dynamic characteristics of 4H-SiC drift step recovery diodes

The dynamic characteristics of 4 H -SiC p + – p – n 0 – n + diodes are experimentally studied in the pulsed modes characteristic of the operation of drift step recovery diodes (DSRD-mode). The effect of the subnanosecond termination of the reverse current maintained by electron-hole plasma prelimina...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 49; no. 11; pp. 1511 - 1515
Main Authors Ivanov, P. A., Kon’kov, O. I., Samsonova, T. P., Potapov, A. S., Grekhov, I. V.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.11.2015
Springer
Subjects
AMPLITUDES
Analysis
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
Magnetic Materials
Magnetism
MATERIALS SCIENCE
OPERATION
P-N JUNCTIONS
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Silicon carbide
SILICON CARBIDES
SOLID-STATE PLASMA
TIME DELAY
Pulse Test
Hole Plasma
Reverse Current
Nonequilibrium Carrier
Current Pulse
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Summary:The dynamic characteristics of 4 H -SiC p + – p – n 0 – n + diodes are experimentally studied in the pulsed modes characteristic of the operation of drift step recovery diodes (DSRD-mode). The effect of the subnanosecond termination of the reverse current maintained by electron-hole plasma preliminarily pumped by a forward current pulse is analyzed in detail. The influence exerted on the DSRD effect by the amplitude of reverse-voltage pulses, the amplitude and duration of forward-current pulses, and the time delay between the forward and reverse pulses is demonstrated and accounted for.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615110093