Zero field reversal probability in thermally assisted magnetization reversal

• Published in: Journal of physics. Conference series Vol. 909; no. 1; pp. 12016 - 12020
• Main Authors: Prasetya, E.B., Utari, Purnama, B.
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.11.2017
• Subjects: Anisotropy; Curie temperature; Magnetic storage; Magnetism; Magnetization reversal; Physics; Room temperature; Switching
• ISSN: 1742-6588; 1742-6596
• DOI: 10.1088/1742-6596/909/1/012016

This paper discussed about zero field reversal probability in thermally assisted magnetization reversal (TAMR). Appearance of reversal probability in zero field investigated through micromagnetic simulation by solving stochastic Landau-Lifshitz-Gibert (LLG). The perpendicularly anisotropy magnetic dot of 50×50×20 nm3 is considered as single cell magnetic storage of magnetic random acces memory (MRAM). Thermally assisted magnetization reversal was performed by cooling writing process from near/almost Curie point to room temperature on 20 times runs for different randomly magnetized state. The results show that the probability reversal under zero magnetic field decreased with the increase of the energy barrier. The zero-field probability switching of 55% attained for energy barrier of 60 kBT and the reversal probability become zero noted at energy barrier of 2348 kBT. The higest zero-field switching probability of 55% attained for energy barrier of 60 kBT which corespond to magnetif field of 150 Oe for switching.