Formation of Semipolar Group-III-Nitride Layers on Textured Si(100) Substrates with Self-Forming Nanomask

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 55; no. 4; pp. 395 - 398
• Main Authors: Bessolov, V. N., Konenkova, E. V., Rodin, S. N., Kibalov, D. S., Smirnov, V. K.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.04.2021; Springer; Springer Nature B.V
• Subjects: Aluminum compounds; Aluminum nitride; Epitaxial growth; Epitaxy; Gallium nitrides; Liquors; Magnetic Materials; Magnetism; Metalorganic chemical vapor deposition; Nitrides; Physics; Physics and Astronomy; Silicon substrates; Symmetry; Vapor phase epitaxy; nanostructured silicon substrate; transition from two semipolar planes to single-layer orientation; semipolar aluminum nitride
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782621040035

The epitaxial growth of AlN and GaN layers is investigated using metalorganic vapor-phase epitaxy on a Si(100) substrate, on the surface of which a V-shaped nanostructure with elements of sub-100-nm size (NP-Si(100) substrate) is formed. It is shown that a corrugated surface is formed from semipolar AlN(10 1) planes with opposite axes of symmetry c during the formation of a semipolar AlN layer at the initial stage of epitaxy. Then, during the growth of the GaN layer, the transition from the symmetric state of two semipolar AlN planes to an asymmetric state with a single orientation of the c axis of the semipolar GaN(10 1) layer occurs, and the c direction in the growing semipolar layer coincides with the direction of the flow of ions to the silicon surface during the formation of a nanomask.