Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers

This study is concerned with the specific features of how high-Q closed modes operating on the total-internal-reflection effect in large-size (up to hundreds or thousands of wavelengths) rectangular resonators based on InGaAs/GaAs/AlGaAs laser heterostructures are formed. The specific features of th...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 53; no. 6; pp. 828 - 832
Main Authors Podoskin, A. A., Romanovich, D. N., Shashkin, I. S., Gavrina, P. S., Sokolova, Z. N., Slipchenko, S. O., Pikhtin, N. A.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.06.2019
Springer
Springer Nature B.V
Subjects
Aluminum gallium arsenide lasers
Aluminum gallium arsenides
Composition
Configurations
Gallium arsenide
Heterostructures
Indium gallium arsenides
Lasers
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Resonators
Semiconductor lasers
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Summary:This study is concerned with the specific features of how high-Q closed modes operating on the total-internal-reflection effect in large-size (up to hundreds or thousands of wavelengths) rectangular resonators based on InGaAs/GaAs/AlGaAs laser heterostructures are formed. The specific features of the spectral composition and spatial configurations of closed-mode configurations are experimentally examined. The presence of frequency combs in the spectra is demonstrated and their correspondence to the separate spatial configurations of closed modes is shown. The effect of changing the pumping level and the temperature on the mode composition of the emission is also considered.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782619060162