Effect of the formation conditions on the properties of ZnO:Ga thin films deposited by magnetron-assisted sputtering onto a cold substrate

The results of studying ZnO:Ga thin films produced by magnetron-assisted sputtering of the corresponding target in argon and in argon with a 5% hydrogen content without heating of the substrate are reported. It is shown that the resistivity and temporal stability of the ZnO:Ga films substantially de...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 47; no. 13; pp. 1687 - 1691
Main Authors Gromov, D. G., Koz’min, A. M., Shulyat’ev, A. S., Polomoshnov, S. A., Bogolyubova, D. N., Shamanaev, S. V.
Format Journal Article
LanguageEnglish
Published Boston Springer US 15.12.2013
Springer
Subjects
Analysis
Coatings
Dielectric films
Electric properties
Hydrogen
Magnetic Materials
Magnetism
Materials for Electronic Engineering
Nuclear radiation
Physics
Physics and Astronomy
Thin films
Zinc oxide
doping
magnetron sputtering
ZnO
coating
film properties
thin films
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Summary:The results of studying ZnO:Ga thin films produced by magnetron-assisted sputtering of the corresponding target in argon and in argon with a 5% hydrogen content without heating of the substrate are reported. It is shown that the resistivity and temporal stability of the ZnO:Ga films substantially depend on their thickness, exposure to solar radiation, and influence of the environment. It is found that doping the ZnO:Ga thin films with hydrogen provides a means for greatly decreasing their resistivity, whereas the degree of temporal stability of the films can be improved using a coating protecting them from the influence of the gas environment.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782613130083