Simulation of the effective concentration profiles in InGaAs/GaAs heterostructures containing δ-doped layers

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 49; no. 1; pp. 50 - 54
• Main Authors: Khazanova, S. V., Degtyarev, V. E., Tikhov, S. V., Baidus, N. V.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.01.2015; Springer
• Subjects: 2014; CAPACITANCE; Comparative analysis; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTRONS; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; LAYERS; Magnetic Materials; Magnetism; March 10–14; MATERIALS SCIENCE; Nizhni Novgorod; Physics; Physics and Astronomy; POISSON EQUATION; QUANTUM WELLS; SCHROEDINGER EQUATION; TEMPERATURE DEPENDENCE; XVIII Symposium “Nanophysics and Nanoelectronics”; Doping Level; Charge Carrier Mobility; Concentration Profile; Mutual Arrangement; GaAs
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782615010121

InGaAs/GaAs heterostructures containing quantum wells and δ-doped layers are studied theoretically and experimentally. On the basis of the procedure of self-consistently solving the Schrödinger equation and Poisson equation, the differential capacitance and the apparent electron concentration profiles are numerically calculated for structures with different mutual arrangements of the quantum well and the δ layer. The results of the calculations are compared with the result of analyzing the experimental capacitance-voltage characteristics of the structures. The systematic features of the behavior of the apparent concentration profiles and capacitance-voltage characteristics in relation to the geometric properties of the structure, the temperature, and the doping level are established.