Effects of Ion Channeling and Co-Implants on Ion Ranges and Damage in Si: Studies With PL, SRP, SIMS and MC Models

This study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random beam orientation 7.5 MeV B and 10 MeV P and As pr...

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Bibliographic Details
Published inIEEE journal of the Electron Devices Society Vol. 12; pp. 399 - 406
Main Authors Current, Michael I., Sakaguchi, Takuya, Kawasaki, Yoji, Samu, Viktor, Pongracz, Anita, Sinko, Luca, Kerekes, Arpad, Durko, Zsolt
Format Journal Article
LanguageEnglish
Published New York IEEE 2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Annealing
Carrier recombination
Damage
Electron devices
Implants
Ion channeling
Ions
Laser beams
Monte Carlo ion range profiles
Photoluminescence
photoluminescence,secondary ion mass spectroscopy
secondary ion mass spectroscopy
Silicon
spreading resistance profiling
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Summary:This study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random beam orientation 7.5 MeV B and 10 MeV P and As profiles and various combinations of co-implants with 50 keV Phosphorus implants in Silicon(100). The effects of annealing on the 10 MeV profiles showed the strong shifts in PL data from implant damage in the as-implanted and annealed samples. Curious "intermittencies" were seen in the PL signals from MeV implant defect centers.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2024.3379328