Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems

Lateral electrochemical metallization (ECM) cells are fabricated with a combined spacer/damascene process. The process allows the realization of nanoscale geometrical distances between the two electrodes independent of lithography. Such lateral ECM cells are an essential part in a reconfigurable int...

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Bibliographic Details
Published inIEEE journal of the Electron Devices Society Vol. 11; p. 1
Main Authors Frahm, T., Buttberg, M., Gvozdev, G., Muller, R. A., Chen, S., Sun, B., Raffauf, L., Menzel, S., Valov, I., Wouters, D., Waser, R., Knoch, J.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2023
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Artificial neural networks
Electrochemical metallization (ECM)
Electrodes
Fabrication
Field programmable gate arrays
Integrated circuit interconnections
Kinetic Monte Carlo
Kinetic theory
Lift-off
Line Edge Roughness
Memristor
Metallizing
Neuromorphic Hardware
Photomicrography
Reconfiguration
ReRAM
RRAM
Switches
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Summary:Lateral electrochemical metallization (ECM) cells are fabricated with a combined spacer/damascene process. The process allows the realization of nanoscale geometrical distances between the two electrodes independent of lithography. Such lateral ECM cells are an essential part in a reconfigurable interconnect system that may yield a strongly increased connectivity in artificial neural networks. The lateral cells show memristive properties comparable to vertical cells with switching voltages in the range of -1.5 V to 2.5 V. The influence of electrode line edge roughness on SET kinetics of such lateral cells is investigated via kinetic Monte Carlo simulations, finding a minor influence on SET time variability.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2023.3297855