Photo- and electroluminescence in strong electric fields in Sb-containing narrow gap semiconductor materials

Spectra of the mid-infrared interband luminescence under interband optical pumping and impact ionization in strong electric fields are experimentally studied in the InAsSb epilayer and in the monocrystalline InSb in the temperature range from 10 K to 85 K. The recombination radiation anisotropy in I...

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Published inJournal of physics. Conference series Vol. 741; no. 1; pp. 12148 - 12152
Main Authors Vinnichenko, M Ya, Makhov, I S, Panevin, V Yu, Selivanov, A V, Firsov, D A, Vorobjev, L E, Pikhtin, N A, Bakhvalov, K V, Shterengas, L, Belenky, G, Kipshidze, G
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.08.2016
Subjects
Anisotropy
Electric fields
Electroluminescence
Indium antimonide
Infrared spectra
Intermetallic compounds
Optical pumping
Physics
Semiconductor materials
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Summary:Spectra of the mid-infrared interband luminescence under interband optical pumping and impact ionization in strong electric fields are experimentally studied in the InAsSb epilayer and in the monocrystalline InSb in the temperature range from 10 K to 85 K. The recombination radiation anisotropy in InSb arising due to electron heating and drift in strong electric fields is observed.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/741/1/012148