Analysis of the Effect of Spacer Layers on Nonlinear Distortions of the Current–Voltage Characteristics of GaAlAs/InGaAs pHEMTs

The paper presents the results of modeling the electrophysical parameters of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structures via self-consistent solution of the Schrödinger and Poisson equations. On the basis of numerical calculations, a method for analyzing non...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 55; no. 12; pp. 895 - 898
Main Authors Tarasova, E. A., Khazanova, S. V., Golikov, O. L., Puzanov, A. S., Obolensky, S. V., Zemlyakov, V. E.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.12.2021
Springer
Springer Nature B.V
Subjects
Current voltage characteristics
High electron mobility transistors
Indium gallium arsenides
Magnetic Materials
Magnetism
Nonlinearity
Physics
Physics and Astronomy
Poisson equation
Semiconductor devices
spacer layers
AlGaAs/InGaAs/GaAs pHEMT
nonlinear distortions
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Summary:The paper presents the results of modeling the electrophysical parameters of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) structures via self-consistent solution of the Schrödinger and Poisson equations. On the basis of numerical calculations, a method for analyzing nonlinear distortions of the transfer current–voltage characteristics of such transistors is proposed. The effect of the spacer layers and the doping level of the δ layer on the nonlinearity of the current–voltage characteristics is estimated.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782621100250