Low-loss carrier-stored IGBT with p-type Schottky diode-clamped shielding layer

• Published in: JOURNAL OF POWER ELECTRONICS Vol. 21; no. 8; pp. 1225 - 1232
• Main Authors: Yi, Bo, Zhao, Qing, Zhang, Qian, Cheng, JunJi, Huang, HaiMeng, Pan, YiLan, Hu, XiaoRan, Xiang, Yong
• Format: Journal Article
• Language: English; Korean
• Published: Singapore Springer Singapore 01.08.2021; 전력전자학회
• Subjects: Electrical Machines and Networks; Engineering; Original Article; Power Electronics; 전기공학; Short-circuit capability; Turn-off loss; Injection enhanced; Carrier stored; Turn-of loss
• ISSN: 1598-2092; 2093-4718
• DOI: 10.1007/s43236-021-00265-1

A novel carrier-stored trench bipolar transistor (CSTBT) with heavily doped carrier-stored layer (CSL) is proposed and investigated by TCAD tools. The voltage of CSL is shielded by a buried p-type layer (P-bury) whose potential is clamped by a p-type Schottky Barrier Diode (pSBD) in series-connection with a PN diode. Hence, the CSL can be heavily doped, and the trade-off between on-state voltage drop ( V on ) and turn-off loss ( E off ) is substantially improved. Compared with that of a conventional CSTBT with floating P-base (FP-CSTBT), the E off of the proposed CSTBT is reduced by 27.9% at V on  = 1.1 V. Owing to the shielding effect of the P-bury layer, the saturation current density of the proposed CSTBT is reduced by 52% compared with that of the FP-CSTBT. Consequently, significantly enlarged short-circuit safe operation area is obtained, and the short-circuit withstand time ( t sc ) is increased to 12.8 s at ultra-low V on (~ 1.1 V).