High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model

• Published in: Chinese physics letters Vol. 32; no. 3; pp. 117 - 120
• Main Author: 房玉龙 冯志红 李成明 宋旭波 尹甲运 周幸叶 王元刚 吕元杰 蔡树军
• Format: Journal Article
• Language: English
• Published: Chinese Physical Society and IOP Publishing 01.03.2015
• Subjects: AlGaN; Aluminum gallium nitrides; Carriers; Drains; Field effect transistors; Gates; Polarization; Semiconductor devices; Transconductance; 场效应晶体管; 性能分析; 掺杂; 极化; 温度依赖性; 通道模型; 高温

We report on the temperature-dependent dc performance of A1GaN/GaN polarization doped field effect transistors （PolFETs）. The rough decrements of drain current and transeonductance with the operation temperature are observed. Compared with the conventional HFETs, the drain current drop of the PolFET...