High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model

We report on the temperature-dependent dc performance of A1GaN/GaN polarization doped field effect transistors （PolFETs）. The rough decrements of drain current and transeonductance with the operation temperature are observed. Compared with the conventional HFETs, the drain current drop of the PolFET...

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Bibliographic Details
Published inChinese physics letters Vol. 32; no. 3; pp. 117 - 120
Main Author 房玉龙 冯志红 李成明 宋旭波 尹甲运 周幸叶 王元刚 吕元杰 蔡树军
Format Journal Article
LanguageEnglish
Published Chinese Physical Society and IOP Publishing 01.03.2015
Subjects
AlGaN
Aluminum gallium nitrides
Carriers
Drains
Field effect transistors
Gates
Polarization
Semiconductor devices
Transconductance
场效应晶体管
性能分析
掺杂
极化
温度依赖性
通道模型
高温
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Summary:We report on the temperature-dependent dc performance of A1GaN/GaN polarization doped field effect transistors （PolFETs）. The rough decrements of drain current and transeonductance with the operation temperature are observed. Compared with the conventional HFETs, the drain current drop of the PolFET is smaller. The transeonductance drop of PolFETs at different gate biases shows different temperature dependences. From the aspect of the unique carrier behaviors of graded AlGaN/GaN heterostructure, we propose a quasi-multi-channel model to investigate the physics behind the temperature-dependent performance of AlGaN/GaN PolFETs.
Bibliography:FANG Yu-Long, FENG Zhi-Hong, LI Cheng-Ming, SONG Xu-Bo, YIN Jia-Yun, ZHOU Xing-Ye, WANG Yuan-Gang, LV Yuan-Jie, CAI Shu-Jun（1.School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083; 2.National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051）
11-1959/O4
We report on the temperature-dependent dc performance of A1GaN/GaN polarization doped field effect transistors （PolFETs）. The rough decrements of drain current and transeonductance with the operation temperature are observed. Compared with the conventional HFETs, the drain current drop of the PolFET is smaller. The transeonductance drop of PolFETs at different gate biases shows different temperature dependences. From the aspect of the unique carrier behaviors of graded AlGaN/GaN heterostructure, we propose a quasi-multi-channel model to investigate the physics behind the temperature-dependent performance of AlGaN/GaN PolFETs.
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/3/037202