蔡树军, 房. 冯. 李. 宋. 尹. 周. 王. 吕. (2015). High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model. Chinese physics letters, 32(3), 117-120. https://doi.org/10.1088/0256-307X/32/3/037202
Chicago Style (17th ed.) Citation蔡树军, 房玉龙 冯志红 李成明 宋旭波 尹甲运 周幸叶 王元刚 吕元杰. "High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model." Chinese Physics Letters 32, no. 3 (2015): 117-120. https://doi.org/10.1088/0256-307X/32/3/037202.
MLA (9th ed.) Citation蔡树军, 房玉龙 冯志红 李成明 宋旭波 尹甲运 周幸叶 王元刚 吕元杰. "High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model." Chinese Physics Letters, vol. 32, no. 3, 2015, pp. 117-120, https://doi.org/10.1088/0256-307X/32/3/037202.