Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As

• Published in: IEEE transactions on magnetics Vol. 44; no. 11; pp. 2692 - 2695
• Main Authors: Lu, J., Bi, J.F., Wang, W.Z., Gan, H.D., Meng, H.J., Deng, J.J., Zheng, H.Z., Zhao, J.H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01.11.2008; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Annealing; Capacitive sensors; Chromium; Compressive properties; Cross-disciplinary physics: materials science; rheology; Crystallization; Curie temperature; Exact sciences and technology; Gallium; Magnetic analysis; Magnetic films; Magnetic properties; Magnetic semiconductors; Magnetism; Materials science; molecular-beam epitaxial growth; Nanocomposites; Nanomaterials; Nanostructure; Other topics in materials science; Physics; Rough surfaces; Semiconductor films; Temperature sensors; Magnetic analysis; Growth; Epitaxy; Magnetic semiconductors; molecular-beam epitaxial growth; Magnetic properties
• ISSN: 0018-9464; 1941-0069
• DOI: 10.1109/TMAG.2008.2003046

We report the influence of growth parameters and post-growth annealing on the structural characterizations and magnetic properties of (Ga, Cr)As films. The crystalline quality and magnetic properties are sensitive to the growth conditions. The single-phase (Ga, Cr)As film with the Curie temperature of 10 K is synthesized at growth temperature T s = 250degC and with nominal Cr content x = 0.016 . However, for the films with x > 0.02, the aggregation of Cr atoms is strongly enhanced as both T s and x increase, which not only brings strong compressive strain in the epilayer, but also roughens the surface. The origin of room-temperature ferromagnetism in (Ga, Cr)As films with nanoclusters is also discussed.