Zigzag boron nitride nanoribbon doped with carbon atom for giant magnetoresistance and rectification behavior based nanodevices

• Published in: Scientific reports Vol. 14; no. 1; pp. 14149 - 9
• Main Authors: Wang, Rigao, Shuang, Feng, Lin, Mingsong, Wei, Xiangfu, Fang, Zheng, She, Duan, Cai, Wei, Shi, Xiaowen, Chen, Mingyan
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group 19.06.2024; Nature Publishing Group UK; Nature Portfolio
• Subjects: Boron; Carbon
• ISSN: 2045-2322; 2045-2322
• DOI: 10.1038/s41598-024-62721-9

Abstract Using the principles of density functional theory (DFT) and nonequilibrium Green’s function (NEGF), We thoroughly researched carbon-doped zigzag boron nitride nanoribbons (ZBNNRs) to understand their electronic behavior and transport properties. Intriguingly, we discovered that careful doping can transform carbon-doped ZBNNRs into a spintronic nanodevice with distinct transport features. Our model showed a giant magnetoresistance (GMR) up to a whopping 10 $$^5$$ 5 under mild bias conditions. Plus, we spotted a spin rectifier having a significant rectification ratio (RR) of 10 $$^4$$ 4 . Our calculated transmission spectra have nicely explained why there’s a GMR up to 10 $$^5$$ 5 for spin-up current at biases of $$-1.2$$ - 1.2 V, $$-1.1$$ - 1.1 V, and $$-1.0$$ - 1.0 V, and also accounted for a GMR up to 10 $$^3$$ 3 –10 $$^5$$ 5 for spin-down current at biases of 1.0 V, 1.1 V, and 1.2 V. Similarly, the transmission spectra elucidate that at biases of 1.0 V, 1.1 V, and 1.2 V for spin-up, and at biases of 1.1 V and 1.2 V for spin-down in APMO, the RRs reach 10 $$^4$$ 4 . Our research shines a light on a promising route to push forward the high-performance spintronics technology of ZBNNRs using carbon atom doping. These insights hint that our models could be game-changers in the sphere of nanoscale spintronic devices.