A 0.6 V 10 GHz CMOS VCO Using a Negative-Gm Back-Gate Tuned Technique
Without an extra on-chip accumulation-mode MOS varactor, a voltage-controlled oscillator (VCO) using a negative-transconductance back-gate tuned technique is demonstrated in a standard 0.18 μm CMOS process to achieve low-voltage, wide-range and high-frequency designs. Employing the varied p-n juncti...
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Published in | IEEE microwave and wireless components letters Vol. 21; no. 3; pp. 163 - 165 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.03.2011
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | Without an extra on-chip accumulation-mode MOS varactor, a voltage-controlled oscillator (VCO) using a negative-transconductance back-gate tuned technique is demonstrated in a standard 0.18 μm CMOS process to achieve low-voltage, wide-range and high-frequency designs. Employing the varied p-n junction capacitance and the varied transconductance in the intrinsic-tuned regime, the VCO provides the tuning range of 9.95 to 11.05 GHz at a 0.6 V supply and dissipates below 4.35 mW. At 11 GHz carrier frequency, the measured phase noise is -110.4 dBc/Hz at a 1 MHz offset. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1531-1309 1558-1764 |
DOI: | 10.1109/LMWC.2010.2102011 |