Effect of Channel Dopant Distribution on Effective Channel Length Extraction

The effect of the channel dopant distribution on the effective channel length ($L_{\text{EFF}}$) of metal--oxide--semiconductor field-effect transistors (MOSFETs) extracted by the channel resistance method (CRM) is studied using simple device models and experimental data. The simple device models ex...

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Published inJapanese Journal of Applied Physics Vol. 52; no. 6; pp. 064301 - 064301-8
Main Authors Terada, Kazuo, Sanai, Kazuhiko, Matsuoka, Shouhei, Tsuji, Katsuhiro
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.06.2013
Subjects
Channels
Density
Devices
Dopants
Extraction
Field effect transistors
MOSFETs
Semiconductor devices
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Summary:The effect of the channel dopant distribution on the effective channel length ($L_{\text{EFF}}$) of metal--oxide--semiconductor field-effect transistors (MOSFETs) extracted by the channel resistance method (CRM) is studied using simple device models and experimental data. The simple device models explain how the channel dopant distribution affects extracted $L_{\text{EFF}}$. The measured data for various channel structures are qualitatively explained using those models. It is found that an accurate $L_{\text{EFF}}$ can probably be extracted if plural samples having different dopant densities can be prepared.
Bibliography:Cross section of MOSFET having halos and extensions. "SD region" means the source or drain region. Rough sketch of channel dopant distribution for MOSFETs with halo having different channel lengths: (a) short case, (b) medium case, and (c) long case. Surface depletion layers for MOSFET with low dopant density and its effective dopant distribution. Approximated carrier density distribution for the MOSFET with halo under gate voltage $V_{\text{G}}$. The horizontal direction shows the position in the channel. The vertical direction (dark region thickness) shows the quantity proportional to carrier density. The carrier density in halo is proportional to $V_{\text{G}}-V_{\text{THH}}$ and that in the substrate to $V_{\text{G}}-V_{\text{THC}}$. Approximated linear relation between $r_{\text{CH}}$ and $L_{\text{EFF}}$. (Color online) $V_{\text{TH}}$--$L_{\text{DES}}$ relations for N-channel MOSFETs. (Color online) $V_{\text{TH}}$--$L_{\text{DES}}$ relations for P-channel MOSFETs. An example of $R_{\text{TOT}}$ vs $L_{\text{DES}}$ relation for L1 sample MOSFETs of typical channel structure. (Color online) Average of $1-R_{\text{XY}}$ as a function of $V_{\text{GT}}$ and its standard deviation calculated from 192 data. (Color online) $R_{\text{XY}}$--$V_{\text{GT}}$ relations for N channel MOSFETs using L1 sample MOSFETs. (Color online) $R_{\text{XY}}$--$V_{\text{GT}}$ relations for N channel MOSFETs using L2 sample MOSFETs. (Color online) Average $\Delta L$--$V_{\text{GT}}$ relations for N channel, L1 sample MOSFETs. (Color online) Average $\Delta L$--$V_{\text{GT}}$ relations for N channel, L2 sample MOSFETs. (Color online) Average $\Delta L$--$V_{\text{GT}}$ relations for P channel, L1 sample MOSFETs. (Color online) Average $\Delta L$--$V_{\text{GT}}$ relations for P channel, L2 sample MOSFETs. (Color online) Average $\Delta L$--$V_{\text{GT}}$ relations for P channel, L1 sample MOSFETs fabricated in a different batch. (Color online) Extracted $\Delta L$ value for N channel MOSFET as a function of halo dose. (Color online) Extracted $\Delta L$ value for P channel MOSFET as a function of halo dose. (Color online) Simulated device structure. (Color online) Simulated $I_{\text{D}}$--$V_{\text{G}}$ relations. (Color online) Measured and simulated $\Delta L$--$V_{\text{GT}}$ relations. Simulated $\Delta L$ as a function of $N_{\text{halo}}$.
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.064301