Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 54; no. 9-10; pp. 2310 - 2314
Main Authors ROTT, Gunnar Andreas, ROTT, Karina, REISINGER, Hans, GUSTIN, Wolfgang, GRASSER, Tibor
Format Conference Proceeding Journal Article
LanguageEnglish
Published Kidlington Elsevier 01.09.2014
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Thermal stress
Voltage threshold
MOS technology
Gate voltage
Bias temperature instability
Continuous time
High temperature
Degradation
Probability density
p channel
Automobile industry
Hot carrier
Drain voltage
MOS transistor
Voltage drift
Damaging
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ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2014.07.040