Space-Charge Plane-Wave Interaction at Semiconductor Substrate Boundary

• Published in: IEEE transactions on microwave theory and techniques Vol. 58; no. 10; pp. 2609 - 2618
• Main Authors: Elabyad, Ibrahim A, Eldessouki, Mohamed S, El-Hennawy, Hadia M
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.10.2010; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Boundary conditions; Charge; Charge accumulation; Charge carrier processes; Charge carriers; Conductivity; Current density; Density; Diffraction, scattering, reflection; Electric charge; Electric fields; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Equations; Exact sciences and technology; Exact solutions; Mathematical model; plane-wave interaction; Radiocommunications; Radiowave propagation; Reflection coefficient; semiconductor substrate; Semiconductors; Substrates; Telecommunications; Telecommunications and information theory; wave-charge transport model; Ground plane; wave-charge transport model; plane-wave interaction; Charge carrier density; Charge carrier; Charge accumulation; Space charge; Space charge wave; Polarized wave; Wave interaction; Charge transport; Wave reflection; Electric field; Energy dissipation; Shielding effect; Plane wave; semiconductor substrate; Printed circuit; Energy absorption; Current density; Reflectance
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/TMTT.2010.2065931

A theoretical investigation of space-charge plane-wave interaction at dielectric-semiconductor interfaces is presented. A full-wave and charge transport formulation is applied to the analysis of the fundamental mode of propagation in a semiconductor substrate backed with a ground plane. Closed-form expressions for the field components, charge carrier density, and current density are obtained. The reflection coefficients for both H- and E-polarized incident waves were then derived from the field solutions. The interaction between the fields and charge carriers causes a charge accumulation at the semiconductor surface in the case of H-polarization. The effects of the charge accumulation on the reflection coefficient are accounted for. Results indicate that the space charge exerts a weak effect on the reflection coefficient and a strong screening effect on the normal component of the electric field. The tangential component, however, is mainly governed by energy dissipation effect resulting from the conduction current.