Synthesis of Thin Niobium Films on Silicon and Study of Their Superconducting Properties in the Dimensional Crossover Region
Niobium films with a thickness of 4–100 nm are synthesized on a silicon substrate under ultrahigh vacuum conditions. Measurements of the electrical resistance show a high superconducting transition temperature T c in the range of 4.7–9.1 K and record-breaking small transition widths Δ T c in the ran...
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Published in | Technical physics Vol. 66; no. 2; pp. 263 - 268 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Moscow
Pleiades Publishing
01.02.2021
Springer Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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Summary: | Niobium films with a thickness of 4–100 nm are synthesized on a silicon substrate under ultrahigh vacuum conditions. Measurements of the electrical resistance show a high superconducting transition temperature
T
c
in the range of 4.7–9.1 K and record-breaking small transition widths Δ
T
c
in the range of 260–11 m. The dependences of
T
c
and Δ
T
c
on the magnetic field are investigated, and the superconducting coherence lengths and mean free paths of conduction electrons for different thicknesses of the synthesized films are determined. A significant influence of the magnetic field on Δ
T
c
is found, which reveals the transition from three- to two-dimensional superconductivity at thicknesses below 10 nm. The dependences of
T
c
and Δ
T
c
on the thickness of the films and the magnitude of the magnetic field are discussed within the framework of existing theories of superconductivity in thin films of superconducting metals. |
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ISSN: | 1063-7842 1090-6525 |
DOI: | 10.1134/S1063784221020249 |