Influence of the Rotation Frequency of a Disk Substrate Holder on the Crystal Structure Characteristics of MOCVD-Grown GaAs Layers

The influence of the rotation frequency of a disk substrate holder on the growth mechanism and crystal structure characteristics of MOCVD-grown GaAs layers has been studied. In the frequency range of 0–400 rpm, variations have been observed in the growth mechanism and rate, as well as of crystal per...

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Bibliographic Details
Published inTechnical physics Vol. 63; no. 2; pp. 211 - 215
Main Authors Boldyrevskii, P. B., Filatov, D. O., Kazantseva, I. A., Revin, M. V., Smotrin, D. S., Yunin, P. A.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.02.2018
Springer
Springer Nature B.V
Subjects
Chemical vapor deposition
Classical and Continuum Physics
Crystal growth
Crystal structure
Epitaxy
Gallium arsenide
Metalorganic chemical vapor deposition
Physical Science of Materials
Physics
Physics and Astronomy
Rotating disks
Substrates
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Summary:The influence of the rotation frequency of a disk substrate holder on the growth mechanism and crystal structure characteristics of MOCVD-grown GaAs layers has been studied. In the frequency range of 0–400 rpm, variations have been observed in the growth mechanism and rate, as well as of crystal perfection.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784218020068