High performance silicon waveguide germanium photodetector

High-performance Ge-on-SOI p–i–n waveguide photodetectors with different sizes were fabricated. The performances, in terms of dark-current, photo current responsivity and 3-d B bandwidth, were well studied. A responsivity of 0.842 A/W at 1550 nm and dark current of 70 n A was measured from this dete...

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Published inChinese physics B Vol. 24; no. 3; pp. 423 - 427
Main Author 李冲 薛春来 李亚明 李传波 成步文 王启明
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.03.2015
Subjects
Dark current
Detectors
Devices
Finite difference method
germanium
Mathematical analysis
optical telecommunication
Photodetectors
Silicon
Simulation
waveguide
Waveguides
仿真结果
器件尺寸
性能
有限差分时域
检测器具
硅波导
锗探测器
频带宽度
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Summary:High-performance Ge-on-SOI p–i–n waveguide photodetectors with different sizes were fabricated. The performances, in terms of dark-current, photo current responsivity and 3-d B bandwidth, were well studied. A responsivity of 0.842 A/W at 1550 nm and dark current of 70 n A was measured from this detector at-1 V. The detector with a size of4 μm×10 μm demonstrated an optical band width of 19 GHz at-5 V for 1550 nm. Both the experimental results and the finite-difference time domain simulation show that, when the device size is above a certain threshold, the absorption is not sensitively dependent on such designing parameters as the width and length of the photodetector.
Bibliography:Li Chong, Xue Chun-Lai, Li Ya-Ming, Li Chuan-Bo, Cheng Bu-Wen, and Wang Qi-Ming（a） state Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b） School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
waveguide,optical telecommunication,germanium
High-performance Ge-on-SOI p–i–n waveguide photodetectors with different sizes were fabricated. The performances, in terms of dark-current, photo current responsivity and 3-d B bandwidth, were well studied. A responsivity of 0.842 A/W at 1550 nm and dark current of 70 n A was measured from this detector at-1 V. The detector with a size of4 μm×10 μm demonstrated an optical band width of 19 GHz at-5 V for 1550 nm. Both the experimental results and the finite-difference time domain simulation show that, when the device size is above a certain threshold, the absorption is not sensitively dependent on such designing parameters as the width and length of the photodetector.
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/3/038502