Thin-film structure of semiconducting end-capped oligothiophenes

Distyryl-oligothiophenes (DS-nT) is one of the promising semiconducting materials that use for organic thin-film transistors (OTFTs). The in-plane structures of vapor deposited ultrathin films of DS-4T, and its derivatives with different end-cap groups, on SiO2substrate were characterized by grazing...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 83; no. 1; p. 012026
Main Authors Yoshimoto, N, Li, W Y, Omote, K, Ackermann, J, Videlot-Ackermann, C, Brisset, H, Fages, F
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.10.2007
IOP Science
Subjects
Morphology
Nucleation
Physics
Semiconductor devices
Thin film transistors
Transport properties
Vapor deposition
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Summary:Distyryl-oligothiophenes (DS-nT) is one of the promising semiconducting materials that use for organic thin-film transistors (OTFTs). The in-plane structures of vapor deposited ultrathin films of DS-4T, and its derivatives with different end-cap groups, on SiO2substrate were characterized by grazing incidence x-ray diffractometry (GIXD). The morphology and film structure change with the nature of end-cap groups. The increase in volume of end-cap group causes the decrease in crystallinity and increase in frequency in nucleation. These characteristics could affect to the transport properties in OTFTs.
ISSN:1742-6596
1742-6588
1742-6596
1742-6588
DOI:10.1088/1742-6596/83/1/012026