Junction-Temperature Determination in InGaN Light-Emitting Diodes Using Reverse Current Method

• Published in: IEEE transactions on electron devices Vol. 60; no. 1; pp. 241 - 245
• Main Authors: Wu, Biqing, Lin, Siqi, Shih, Tien-Mo, Gao, Yulin, Lu, Yijun, Zhu, Lihong, Chen, Guolong, Chen, Zhong
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.01.2013; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Current measurement; Devices; Diodes; Educational institutions; Electric potential; Electronics; Exact sciences and technology; Indium gallium nitrides; Junction temperature; Junctions; Light emitting diodes; light-emitting diodes (LEDs); Mathematical analysis; Mathematical models; Optoelectronic devices; reverse current; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Temperature measurement; Temperature sensors; Voltage; Voltage measurement; Ternary compound; light-emitting diodes (LEDs); Optoelectronic device; Indium nitride; reverse current; Gallium nitride; III-V compound; Junction temperature; Light emitting diode
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2012.2228656

A method is presented in this study to determine the junction temperature ( T j ) of LED in terms of the relationship between the diode reverse current ( I R ) and T j . A theoretical model for the dependence of I R on T j is derived on the basis of the Shockley equation and is validated by our experimental results. The method is compared with the conventional forward voltage method, and its advantages have been identified.