On an Electroless Plating (EP)-Based Pd/AlGaN/GaN Heterostructure Field-Effect Transistor (HFET)-Type Hydrogen Gas Sensor
A Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)-type hydrogen gas sensor, based on the sensitization, activation, and electroless plating (EP) deposition processes, is fabricated and studied. Due to the used sensitization and activation approaches, a dense and uniform EP seed layer cou...
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Published in | IEEE electron device letters Vol. 33; no. 6; pp. 788 - 790 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.06.2012
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | A Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)-type hydrogen gas sensor, based on the sensitization, activation, and electroless plating (EP) deposition processes, is fabricated and studied. Due to the used sensitization and activation approaches, a dense and uniform EP seed layer could be achieved. Good dc and microwave characteristics, including the higher turn-on voltage, lower reverse leakage current, improved thermal stability of drain current, enhanced unity current gain cutoff frequency, and maximum oscillation frequency, are obtained for a 1-m-gate-length device. Moreover, the significant hydrogen gas sensing performance, such as larger drain current variation and higher hydrogen detection sensitivity, are found under 1% and 5 ppm H 2 /air ambiences, respectively. Consequently, the studied EP-based Pd/AlGaN/GaN HFET gives the promise for high-performance electronic device and hydrogen gas sensor applications. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2012.2190032 |