Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis

A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and α-Si layers were deposited by magnetron sputtering respectively and annealed at 480°C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuo...

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Published inScience China Technological Sciences Vol. 53; no. 11; pp. 3002 - 3005
Main Authors Huang, TianMao, Chen, NuoFu, Zhang, XingWang, Bai, YiMing, Yin, ZhiGang, Shi, HuiWei, Zhang, Han, Wang, Yu, Wang, YanShuo, Yang, XiaoLi
Format Journal Article
LanguageEnglish
Published Heidelberg SP Science China Press 01.11.2010
Subjects
Engineering
aluminum induced crystallization
polycrystalline silicon thin film
preferred orientation
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Abstract A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and α-Si layers were deposited by magnetron sputtering respectively and annealed at 480°C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between γ-Al 2 O 3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of γ-Al 2 O 3 , which was formed at the early stage of annealing.
AbstractList A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and α-Si layers were deposited by magnetron sputtering respectively and annealed at 480°C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between γ-Al 2 O 3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of γ-Al 2 O 3 , which was formed at the early stage of annealing.
Author Shi, HuiWei
Bai, YiMing
Chen, NuoFu
Wang, Yu
Zhang, XingWang
Yin, ZhiGang
Huang, TianMao
Zhang, Han
Wang, YanShuo
Yang, XiaoLi
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crossref_primary_10_1016_j_tsf_2016_08_016
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Keywords aluminum induced crystallization
polycrystalline silicon thin film
preferred orientation
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Snippet A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and α-Si layers were deposited by...
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Title Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis
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